<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ziyad M. Shafik</style></author><author><style face="normal" font="default" size="100%">Mahmoud I. Masoud</style></author><author><style face="normal" font="default" size="100%">John Fletcher</style></author><author><style face="normal" font="default" size="100%">Stephen J. Finney</style></author><author><style face="normal" font="default" size="100%">Barry W. Williams</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Efficiency improvement techniques of high current low voltage rectifiers using MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 44th International Universities Power Engineering Conference</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Power electronic devices and applications</style></keyword><keyword><style  face="normal" font="default" size="100%">Power Electronics and Devices</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">September</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%"></style></number><edition><style face="normal" font="default" size="100%"></style></edition><publisher><style face="normal" font="default" size="100%"></style></publisher><pub-location><style face="normal" font="default" size="100%">University of Strathclyde</style></pub-location><volume><style face="normal" font="default" size="100%"></style></volume><pages><style face="normal" font="default" size="100%"></style></pages><isbn><style face="normal" font="default" size="100%"></style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, the application of synchronous rectifiers to a high current low voltage power supply is introduced. Analysis show that using MOSFETs offers the advantage of reducing the conduction losses significantly compared to Diodes and Thyristors, with the possibility of achieving almost an ideal switch by paralleling more than one MOSFET. Also, the design considerations for paralleling MOSFETs are briefly discussed, as paralleling is required for satisfying the high current requirements. Cryogenic operation offers further reduction of the conduction losses. MOSFETs with various ratings are tested in order to decide whether it is advantageous from the power consumed (for cooling), and the power saved (due to the on-resistance reduction) ratio.</style></abstract><issue><style face="normal" font="default" size="100%"></style></issue><work-type><style face="normal" font="default" size="100%"></style></work-type><accession-num><style face="normal" font="default" size="100%"></style></accession-num><call-num><style face="normal" font="default" size="100%"></style></call-num><notes><style face="normal" font="default" size="100%"></style></notes><custom1><style face="normal" font="default" size="100%"></style></custom1><custom2><style face="normal" font="default" size="100%"></style></custom2><custom3><style face="normal" font="default" size="100%"></style></custom3><custom4><style face="normal" font="default" size="100%"></style></custom4><custom5><style face="normal" font="default" size="100%"></style></custom5><custom6><style face="normal" font="default" size="100%"></style></custom6><custom7><style face="normal" font="default" size="100%"></style></custom7><research-notes><style face="normal" font="default" size="100%"></style></research-notes><num-vols><style face="normal" font="default" size="100%"></style></num-vols><orig-pub><style face="normal" font="default" size="100%"></style></orig-pub><reprint-edition><style face="normal" font="default" size="100%"></style></reprint-edition><section><style face="normal" font="default" size="100%"></style></section><auth-address><style face="normal" font="default" size="100%"></style></auth-address><remote-database-name><style face="normal" font="default" size="100%"></style></remote-database-name><remote-database-provider><style face="normal" font="default" size="100%"></style></remote-database-provider><label><style face="normal" font="default" size="100%"></style></label><access-date><style face="normal" font="default" size="100%"></style></access-date></record></records></xml>
