Modeling of Large Power IGCTs Based on Simulations and Experiments
| Title | Modeling of Large Power IGCTs Based on Simulations and Experiments |
| Publication Type | Conference Paper |
| Year of Publication | 2009 |
| Authors | Renwang, HE, Xianggen YIN |
| Conference Name | Proceedings of the 44th International Universities Power Engineering Conference |
| Date Published | September |
| Conference Location | University of Strathclyde |
| Keywords | Power Electronics and Devices Power Quality and Power Electronic Applications |
| Abstract | Integrated Gate Commutated Thyristors (IGCTs) have been finding wide applications in many fields. Yet there are no models of IGCTs in common electronic simulation programs. This causes many problems and much inconvenience for the further study and simulation of IGCTs. To solve these problems, the paper takes ABBs 5SHY35l4510 IGCT as the research object, analyzes its main parameters, especially its anode current and terminal voltage characteristics, and establishes its practical model based on simulations and experiments. The IGCT model consists mainly of four subcircuits: time-delay circuit, static control circuit, turn-on transient control circuit and turn-off transient control circuit. Simulation waves and experiment results show that the model is correct, feasible and appropriate. |
